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cha5250 - qdg ref. : dscha5250 - qdg - full - 2355 - 20 dec 12 1 / 16 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel .: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 5.5 - 9ghz medium power amplifier gaas monolithic microwave ic in smd leadless package description the cha5250 - qdg is a three stages monolithic gaas medium power circuit, close to 1 watt output power. it is designed for commercial communication systems. the circuit is manufactured with a phemt process, 0.5m gate length. main features gain & rloss main electrical characteristics tamb.= +25c symbol parameter min typ max unit freq frequency range 5.5 9.0 ghz gain linear gain 26.0 db otoi output toi 36.0 dbm pout output power @1db comp. 28.0 dbm - 30 - 25 - 20 - 15 - 10 - 5 0 5 10 15 20 25 30 0 5 10 15 20 gain & return losses (db) frequency (ghz) s11 s21 s22
cha5250 - qdg 5.5 - 9ghz medium power amplifier ref. : dscha5250 - qdg - full - 2355 - 20 dec 12 2 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 electrical characteristics tamb.= +25c, vd = +7.0v symbol parameter min typ max unit freq frequency range 5.5 9 ghz gain linear gain 26 db rl_in input return loss - 12 db rl_out output return loss - 10 db op1db output power @1db compression 28 dbm psat saturated output power 30 dbm oip3 output ip3 36 dbm pae power added efficiency @ 1db compression 30 % nf noise figure 7 db idq quiescent drain current 280 ma vg gate voltage - 0.45 v these values are representative of onboard measurements as defined on the drawing in paragraph "evaluation mother board". absolute maximum ratings (1) tamb.= +25c symbol parameter values unit vd drain bias voltage 7.5v v idq drain bias quiescent current 0.4 a vg gate bias voltage - 2 to +0 v pin input continuous power 8 dbm tj junction temperature 175 c ta operating temperature range - 40 to +85 c tstg storage temperature range - 55 to +150 c (1) operation of this device above anyone of these parameters may cause permanent damage. typical bias conditions tamb.= +25c symbol pad n o parameter values unit vd1 12 dc drain voltage 1 st stage 7 v vd2 9 dc drain voltage 2nd stage 7 v vd3 7 dc drain voltage 3rd stage 7 v vg 22 dc gate voltage tuned for idq= 280ma - 0.45 v
5.5 - 9ghz medium power amplif ier cha5250 - qdg ref. : dscha5250 - qdg - full - 2355 - 20 dec 12 3 / 16 specifications subject to change without notice bat. charmille - parc sil ic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 device thermal performances all the figures given in this section are obtained assuming that the qfn device is cooled down only by conduction through the package thermal pad (no convection mode considered). the temperature is monitored at the package back - side interface (tcase) as shown below. the system maximum temperature must be adjusted in order to guarantee that tcase remains below the maximum value specified in the next table. so, the system pcb must be designed to comply with this requirement. a derating must be applied on the dissipated power if the tcase temperature can not be maintained below the maximum temperature specified (see the curve pdiss. max) in order to guarantee the nominal device life t ime (mttf). recommended max. junction temperature (tj max) : 158 c junction temperature absolute maximum rating : 175 c max. continuous dissipated power (pdiss. max.) : 2.0 w => pdiss. max. derating above tcase (1) = 85 c : 27 mw/c junction-case thermal resistance (rth j-c) (2) : <37 c/w minimum tcase operating temperature (3) : -40 c maximum tcase operating temperature (3) : 85 c minimum storage temperature : -55 c maximum storage temperature : 150 c (1) derating at junctio n temperature co nstant = tj max. (2) rth j-c is calculated fo r a wo rst case co nsidering the ho t t e s t junc t io n o f the m m ic and all the devices biased. (3) tcase=p ackage back side temperature measured under the die-attach-pad (see the drawing belo w). 6.4 device thermal specification : CHA5250-QDG 0 0.5 1 1.5 2 2.5 - 50 - 25 0 25 50 75 100 125 150 175 pdiss. max. @tj cha5250 - qdg 5.5 - 9ghz medium power amplifier ref. : dscha5250 - qdg - full - 2355 - 20 dec 12 4 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical package sij parameters tamb.= +25c, vd = +7.0v, idq = 280ma freq (ghz) s11 (db) phs11 () s21 (db) phs21 () s12 (db) phs12 () s22 (db) phs22 () 2 - 4.1 - 153.5 - 26.3 115.3 - 76.2 147.1 - 0.3 - 77.1 2.5 - 5.3 - 175.6 - 5.1 68.1 - 75.5 138.7 - 0.5 - 98.6 3 - 6.5 166.1 5.5 - 11.9 - 75.0 105.5 - 1.0 - 122.7 3.5 - 8.1 150.2 13.7 - 75.1 - 69.7 100.4 - 1.8 - 151.9 4 - 10.2 137.4 21.9 - 149.1 - 68.9 77.5 - 4.5 168.5 4.5 - 13.1 130.5 26.2 119.1 - 71.0 87.0 - 14.2 143.1 5 - 16.3 138.6 26.6 41.8 - 68.5 85.2 - 18.2 - 178.5 5.5 - 16.7 160.9 26.4 - 20.4 - 63.4 60.0 - 20.7 - 167.4 6 - 14.3 169.7 26.3 - 76.4 - 64.5 77.8 - 21.3 - 121.7 6.5 - 12.3 164.8 26.2 - 128.8 - 64.6 57.5 - 16.0 - 111.2 7 - 11.3 153.4 26.2 - 179.1 - 63.2 47.9 - 12.8 - 120.1 7.5 - 11.3 138.8 26.4 131.2 - 62.6 33.7 - 11.0 - 133.9 8 - 12.6 120.5 26.6 80.5 - 61.5 20.4 - 10.0 - 147.8 8.5 - 18.2 91.7 26.9 27.5 - 61.6 2.3 - 9.7 - 159.8 9 - 19.2 - 74.4 26.9 - 31.0 - 63.6 - 28.1 - 9.5 - 170.3 9.5 - 7.6 - 124.4 25.7 - 96.1 - 64.1 - 68.8 - 9.4 176.4 10 - 3.7 - 158.7 22.4 - 157.7 - 70.4 - 139.9 - 10.2 162.8 10.5 - 2.3 176.0 18.2 150.8 - 72.0 - 162.9 - 11.4 153.8 11 - 1.7 157.8 14.1 107.3 - 68.3 132.4 - 12.8 148.0 11.5 - 1.3 143.3 10.3 68.7 - 63.3 107.0 - 14.5 145.9 12 - 1.2 131.0 6.8 32.9 - 65.0 95.9 - 16.1 148.4 12.5 - 1.0 120.0 3.7 - 1.4 - 64.2 82.5 - 17.8 159.3 13 - 0.9 109.5 0.8 - 35.2 - 63.2 115.2 - 17.9 - 179.4 13.5 - 0.8 99.4 - 1.8 - 68.8 - 56.6 79.6 - 15.3 - 164.4 14 - 0.7 89.6 - 4.4 - 102.9 - 57.5 61.0 - 12.4 - 163.5 14.5 - 0.6 79.9 - 6.8 - 138.2 - 60.4 55.5 - 9.9 - 168.9 15 - 0.6 70.1 - 9.3 - 175.6 - 57.3 54.7 - 7.9 - 177.9 15.5 - 0.6 60.7 - 12.1 145.2 - 57.4 48.0 - 6.3 171.2 16 - 0.5 51.1 - 15.3 104.2 - 53.7 43.8 - 5.2 159.0 16.5 - 0.5 41.7 - 19.2 64.3 - 54.9 32.2 - 4.3 146.0 17 - 0.5 32.3 - 23.5 27.0 - 51.0 7.1 - 3.6 133.0 17.5 - 0.4 23.0 - 28.3 - 7.2 - 53.7 - 47.7 - 3.1 119.8 18 - 0.4 14.0 - 33.3 - 36.3 - 61.7 - 53.4 - 2.7 106.9 18.5 - 0.3 5.2 - 38.4 - 60.8 - 69.3 - 20.6 - 2.3 93.4 19 - 0.3 - 3.5 - 43.4 - 82.2 - 64.5 2.7 - 2.0 79.7 19.5 - 0.3 - 11.6 - 47.5 - 105.2 - 67.3 - 114.2 - 1.8 66.3 20 - 0.2 - 19.5 - 53.3 - 128.8 - 69.8 49.6 - 1.5 53.2 the sij measurement calibration planes are defined in the paragraph definition of the sij reference planes.
5.5 - 9ghz medium power amplif ier cha5250 - qdg ref. : dscha5250 - qdg - full - 2355 - 20 dec 12 5 / 16 specifications subject to change without notice bat. charmille - parc sil ic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = +7.0v, idq = 280ma measurement in the qfn planes as defined in paragraph definition of the planes linear gain & return loss linear gain versus drain voltage - 30 - 25 - 20 - 15 - 10 - 5 0 5 10 15 20 25 30 2 3 4 5 6 7 8 9 10 11 12 gain & return losses (db) frequency (ghz) s11 s21 s22 18 19 20 21 22 23 24 25 26 27 28 29 30 2 3 4 5 6 7 8 9 10 11 12 gain (db) frequency (ghz) 7v 6v
cha5250 - qdg 5.5 - 9ghz medium power amplifier ref. : dscha5250 - qdg - full - 2355 - 20 dec 12 6 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = +7.0v, idq = 280ma measurement in the plan of the connectors, using the proposed land pattern & board, as defined in paragraph evaluation mother board linear gain & return loss linear gain versus temperature 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 4 5 6 7 8 9 10 gain (db) frequency (ghz) 85 c 25 c - 40 c - 30 - 25 - 20 - 15 - 10 - 5 0 5 10 15 20 25 30 0 5 10 15 20 gain & return losses (db) frequency (ghz) s11 s21 s22
5.5 - 9ghz medium power amplif ier cha5250 - qdg ref. : dscha5250 - qdg - full - 2355 - 20 dec 12 7 / 16 specifications subject to change without notice bat. charmille - parc sil ic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = +7.0v, idq = 280ma output power at 1 db compression power added efficiency at 1 db compression 22 23 24 25 26 27 28 29 30 31 32 5 6 7 8 9 10 output p1db (dbm) frequency (ghz) 85 c 25 c - 40 c 0 5 10 15 20 25 30 35 40 45 50 5 6 7 8 9 10 pae (%) frequency (ghz) 85 c 25 c - 40 c
cha5250 - qdg 5.5 - 9ghz medium power amplifier ref. : dscha5250 - qdg - full - 2355 - 20 dec 12 8 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = +7.0v, idq = 280ma drain current at 1 db compression output power at 1 db compression versus vd 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 5 6 7 8 9 10 id (a) frequency (ghz) 85 c 25 c - 40 c 22 23 24 25 26 27 28 29 30 31 32 5 6 7 8 9 10 output p1db (dbm) frequency (ghz) 6v 7v
5.5 - 9ghz medium power amplif ier cha5250 - qdg ref. : dscha5250 - qdg - full - 2355 - 20 dec 12 9 / 16 specifications subject to change without notice bat. charmille - parc sil ic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = +7.0v, idq = 280ma output power at 1 db compression versus idq output toi (dbm) at two pout 22 23 24 25 26 27 28 29 30 31 32 5 6 7 8 9 10 output p1db (dbm) frequency (ghz) 225ma 250ma 280ma 30 31 32 33 34 35 36 37 38 39 40 6 7 8 9 oip3 (dbm) frequency (ghz) pout dcl= 12dbm pout dcl= 18dbm
cha5250 - qdg 5.5 - 9ghz medium power amplifier ref. : dscha5250 - qdg - full - 2355 - 20 dec 12 10 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = +7.0v, idq = 280ma output toi (dbm) versus idq at pout=12dbm output toi (dbm) versus temperature at pout=12dbm 30 31 32 33 34 35 36 37 38 39 40 6 7 8 9 oip3 (dbm) frequency (ghz) 280ma 250ma 225ma 30 31 32 33 34 35 36 37 38 39 40 6 7 8 9 oip3 (dbm) frequency (ghz) 25 c +85 c - 40 c
5.5 - 9ghz medium power amplif ier cha5250 - qdg ref. : dscha5250 - qdg - full - 2355 - 20 dec 12 11 / 16 specifications subject to change without notice bat. charmille - parc sil ic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 package outline (1) matt tin, lead free (green) 1 - gnd (2) 9 - vd2 17 - gnd (2) units : mm 2 - gnd (2) 10 - nc 18 - gnd (2) from the standard : jedec mo - 220 3 - gnd (2) 11 - nc 19 - nc (vggd) 4 - rf out 12 - vd1 20 - nc 25 - gnd 5 - gnd (2) 13 - gnd (2) 21 - nc 6 - gnd (2) 14 - gnd (2) 22 - vg 7 - vd3 15 - rf in 23 - nc 8 - nc 16 - gnd (2) 24 - nc (1) the package outline drawing included to this data - sheet is given for indication. refer to the application note an0017 ( http://www.ums - gaas.com ) for exact package dimensions. (2) it is strongly recommended to ground all pins marked gnd through the pcb board.
cha5250 - qdg 5.5 - 9ghz medium power amplifier ref. : dscha5250 - qdg - full - 2355 - 20 dec 12 12 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 evaluation mother board
5.5 - 9ghz medium power amplif ier cha5250 - qdg ref. : dscha5250 - qdg - full - 2355 - 20 dec 12 13 / 16 specifications subject to change without notice bat. charmille - parc sil ic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 definition of the sij reference planes the reference planes used for sij measurements given above are symmetrical from the symmetrical axis of the package (see drawing beside). the input and output reference planes are located at 3.18mm offset (input wise and output wise respectively) from this axis. then, the given sij parameters incorporate the land pattern of the evaluation motherboard recommended in paragraph "evaluation mother board". 3.18 3.18
cha5250 - qdg 5.5 - 9ghz medium power amplifier ref. : dscha5250 - qdg - full - 2355 - 20 dec 12 14 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 notes the dc connections do not include any decoupling capacitor in package, therefore it is mandatory to provide a good external dc decoupling (100pf & 10nf) on the pc board, as close as possible to the package. vd2 rf out rf in vg 15 4 9 22 vd3 7 vd1 12
5.5 - 9ghz medium power amplif ier cha5250 - qdg ref. : dscha5250 - qdg - full - 2355 - 20 dec 12 15 / 16 specifications subject to change without notice bat. charmille - parc sil ic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 dc schematic 7v, 280ma 40 ma vg # - 0.5 v 160 ma 80 ma vd1 100 ? rf in 50 ? 10 ? vd2 vd3 rf out 25 ? 5 ? 10 ?
cha5250 - qdg 5.5 - 9ghz medium power amplifier ref. : dscha5250 - qdg - full - 2355 - 20 dec 12 16 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended package footprint refer to the application note an0017 available at http://www.ums - gaas.com for package foot print recommendations. smd mounting procedure for the mounting process standard techniques involving solder paste and a suitable reflow process can be used. for further details, see application note an0017. recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2 011/65 and reach n1907/2006. more environmental data are available in the application note an0019 also available at http://www.ums - gaas.com . recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums package products. ordering information qfn 4x4 rohs compliant package: cha5250 - qdg /xy stick: xy = 20 tape & reel: xy = 21 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent righ ts of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.

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